PART |
Description |
Maker |
TGF2025 |
250 um Discrete GaAs pHEMT
|
TriQuint Semiconductor
|
TGF2040 |
400 um Discrete GaAs pHEMT
|
TriQuint Semiconductor
|
MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
MRFG35010MT1 |
MRFG35010MT1 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT Gallium Arsenide PHEMT
|
MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
MRFG35003M6T1 |
MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT GALLIUM ARSENIDE PHEMT
|
MOTOROLA[Motorola, Inc]
|
HM69SPDT312 HS69SPDT312 |
Single Pole Double Throw GaAs PHEMT Switch 0.1 6 GHz 单刀双掷开关GaAs PHEMT.16千兆 Single Pole Double Throw GaAs PHEMT Switch 0.1 ?6 GHz Single Pole Double Throw GaAs PHEMT Switch 0.1 - 6 GHz
|
Sumitomo Electric Industries, Ltd. Eudyna Devices Inc
|
TGF2021-08 TGF2021-08-15 |
DC - 12 GHz Discrete power pHEMT
|
TriQuint Semiconductor, Inc.
|
TGF2022-60 |
DC - 20 GHz Discrete power pHEMT
|
TriQuint Semiconductor,Inc.
|
TGF2022-48 |
DC - 20 GHz Discrete power pHEMT
|
TRIQUINT[TriQuint Semiconductor]
|
MMG20241H MMG20241HT1 |
GaAs Enhancement Mode pHEMT
|
NXP Semiconductors
|
SPF-3143Z |
Low Noise pHEMT GaAs FET
|
SIRENZA MICRODEVICES
|
SPF-3143 |
Low Noise pHEMT GaAs FET
|
SIRENZA MICRODEVICES
|